High-k Materials in Multi-Gate FET Devices
High-k Materials in Multi-Gate FET Devices by Shubham Tayal, published by CRC Press on September 25, 2023, is a comprehensive exploration of high-k materials in the context of advanced FET devices. This edition, consisting of 164 pages, delves into the engineering challenges and applications associated with high-k dielectrics, focusing on their role in enhancing the performance of multi-gate FETs at both the device and circuit levels.
Readers will find a thorough discussion on the fundamental aspects of FET devices, including the motivations behind multi-gate FETs and current trends in transistor technologies. The book addresses the fabrication and characterization of high-k materials, providing insights into their impact on gate-oxide and gate-sidewall spacers in emerging multi-gate FET architectures. It also outlines future research directions, making it a valuable resource for researchers in materials science, electronics engineering, and semiconductor device modeling, particularly those interested in nanodevices like FinFET and Tunnel FET.
Official synopsis Publisher
High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.
- Provides basic knowledge about FET devices
- Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
- Discusses fabrication and characterization of high-k materials
- Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
- Offers detailed application of high-k materials for advanced FET devices
- Considers future research directions
This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
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