High-Speed Semiconductor Devices
High-Speed Semiconductor Devices by Simon M. Sze, published by Wiley on January 16, 1991, is a comprehensive resource that delves into the physical principles and operational characteristics of high-speed semiconductor devices. This edition spans 656 pages and is presented in English, making it suitable for advanced students, professional engineers, and scientists engaged in semiconductor device research. The book introduces essential topics, beginning with material properties and advanced technologies, which lay the groundwork for understanding various semiconductor devices.
Readers will find detailed discussions on a range of closely related devices, including MOSFETs, MESFETs, heterojunction FETs, and more. Each chapter is designed to be self-contained, featuring summary sections, explorations of future device trends, and instructional problem sets. This structured approach allows for a thorough analysis of high-speed semiconductor devices, making it a valuable addition to the library of anyone interested in technology and engineering, particularly in the fields of electronics and semiconductors.
Official synopsis Publisher
Introduces the physical principles and operational characteristics of high speed semiconductor devices. Intended for use by advanced students as well as professional engineers and scientists involved in semiconductor device research, it includes the most advanced and important topics in high speed semiconductor devices. Initial chapters cover material properties, advanced technologies and novel device building blocks, and serve as the basis for understanding and analyzing devices in subsequent chapters. The following chapters cover a group of closely related devices that includes MOSFETs, MESFETs, heterojunction FETs and permeable-base transistors, hot electron transistors, microwave diodes and photonic devices, among others. Each chapter is self-contained and features a summary section, a discussion of future device trend, and an instructional problem set.
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