ULSI Semiconductor Technology Atlas
ULSI Semiconductor Technology Atlas by Chih-Hang Tung, published by John Wiley & Sons on October 6, 2003, is a comprehensive resource that delves into the intricacies of Ultra Large Scale Integration (ULSI) technology. This edition spans 680 pages and is presented in English, featuring over 1,100 Transmission Electron Microscopy (TEM) images that illustrate the science behind ULSI semiconductor chips, which contain more than 10 million devices per chip. The book is structured into four parts, covering essential topics such as ULSI process introductions, device construction analysis, and key modules like ion implantation and metallization.
Readers will find a detailed exploration of integrated devices, including various types of DRAM and SRAM, alongside discussions on special applications of TEM in failure analysis and advanced packaging development. This atlas serves as an innovative guide for engineers, managers in the microelectronics industry, and graduate students, providing a historical context and addressing the evolution of ULSI process challenges. The extensive use of TEM images enhances understanding of complex concepts in semiconductors and electronics, making this book a valuable addition to the field.
Official synopsis Publisher
More than 1,100 TEM images illustrate the science of ULSI
The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems.
The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts:
* Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation
* Part II focuses on key ULSI modules–ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization
* Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development
* Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics
This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with:
* More than 1,100 TEM images to illustrate the science of ULSI
* A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues
* Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
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