Electron Microscopy Studies of Ion Implanted Silicon
Electron Microscopy Studies of Ion Implanted Silicon by K. Seshan is a scholarly work published by BiblioScholar on February 28, 2013. This edition, written in English and comprising 110 pages, presents research and development results related to ion implantation in silicon, as documented by the Office of Scientific & Technical Information (OSTI) under the U.S. Department of Energy.
Readers will find a detailed examination of the methodologies and findings associated with electron microscopy in the context of scientific experiments and measurements. The book focuses on the technical aspects of microscopy and its applications in education and teaching, making it relevant for those interested in the intersection of science and practical experimentation.
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The Office of Scientific & Technical Information (OSTI), is a part of the U.S. Department of Energy (DOE) that houses research and development results from projects funded by the DOE. The information is generally an article, technical document, conference paper or dissertation. This is one of those publications.
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