Defects in Boron Ion Implanted Silicon
Defects in Boron Ion Implanted Silicon by W. K. Wu is a technical publication from BiblioScholar, released on February 28, 2013. This 120-page work is presented in English and focuses on research and development results related to boron ion implantation in silicon, as documented by the Office of Scientific & Technical Information (OSTI) under the U.S. Department of Energy.
Readers will find detailed insights into the technical aspects of boron ion implantation, including its implications for education and teaching within the field. The publication serves as a resource for those interested in the intersection of scientific research and educational methodologies, providing a comprehensive overview of the findings and methodologies associated with this specific area of study.
Official synopsis Publisher
The Office of Scientific & Technical Information (OSTI), is a part of the U.S. Department of Energy (DOE) that houses research and development results from projects funded by the DOE. The information is generally an article, technical document, conference paper or dissertation. This is one of those publications.
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