Mosfet Technologies A Comprehensive Bibliography
“**Mosfet Technologies: A Comprehensive Bibliography**” by A. H. Agajanian, published by Springer US on March 19, 2012, is a softcover reprint of the original 1st edition from 1980, comprising 377 pages. This book provides an extensive bibliography of over 4,400 references related to metal-oxide-semiconductor field-effect transistor (MOSFET) technologies, detailing the evolution and advancements in this area since the invention of the MOSFET in 1960 and the subsequent development of processing technologies in 1968.
Readers will find a thorough compilation of literature that covers various structures and improvements in MOS devices, including CMOS, MNOS, SOS, VMOS, DMOS, and FAMOS. The bibliography also encompasses studies on charge-coupled devices and GaAs FETs, reflecting the significant interest in MOSFETs due to their advantages in device density, yield, and cost-effectiveness compared to bipolar transistors for VLSI applications. This resource serves as a valuable reference for those engaged in technology and engineering, particularly in the electrical field.
Official synopsis Publisher
The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET’s. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET’s more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET’s.
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