Sub-micron Semiconductor Devices Design and Applications

Cover of Sub-micron Semiconductor Devices Design and Applications by Ashish Raman
Author: Ashish Raman
Publisher: CRC Press
Year: 2022
Language: en
Edition: 1
Pages: 392
ISBN-13: 9780367648091
Dimensions:
Height: 10.25 Inches
Length: 7.25 Inches
Weight: 2.0282528104 Pounds
Width: 1 Inches
Dewey Decimal: 621.38152
Editorial overview Touché

Sub-micron Semiconductor Devices Design and Applications by Ashish Raman, published by CRC Press in 2022, is a comprehensive exploration of advancements in semiconductor technology. This edition spans 392 pages and is presented in English. The book delves into fundamental phenomena in nanoscale semiconductor devices and highlights recent developments in materials such as phosphorene and graphene, focusing on their applications in high-performance devices and sensors.

Readers will find a detailed examination of various topics, including the study of transition metal dichalcogenides in junctionless transistors and the design of innovative field-effect transistors. The text also covers techniques for enhancing energy storage performance and the simulation of reconfigurable circuits. With contributions from multiple authors, this work serves as a resource for those interested in the intersections of technology, engineering, and microelectronics.


Official synopsis Publisher

Fundamental phenomena in nano scale semiconductor devices / Zeinab Ramezani and Arash Ahmadivand — Recent advancements in growth and stability of phosphorene-prospects for high performance devices / Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, Amitesh Kumar — Study of transition metal dichalcogenides in junctionless transistors and effect of variation in dielectric oxide / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta — GNRFET based ternary repeaters : prospects and potential implementation for efficient GNR interconnects / Afreen Khursheed and Kavita Khare — An effective study on particulate matter (PM) removal using graphene filter / Katyayani Bhardwaj, Aryan and Ravindra Kumar Yadav — Recent trends in fabrication of graphene-based devices for detection of heavy metal ions in water / Avik Sett, Monojit Mondal, Santanab Majumder, Tarun Kanti Bhattacharyya — Vertical tunnel FET having dual MOSCAP geometry / Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam — Leakage current and capacitance reduction in CMOS technology / Ajay Somkuwar, Laxmi Singh — Design of SiGe sourced gate-all-around TFET with gate-on-source for enhanced analog performance / Navaneet Kumar Singh, Rajib Kar and Durbadal Mandal — Solving Schrodinger’s equation for low dimensional nanostructures for understanding quantum confinement effects / Amit Kumar — Simulation of reconfigurable FET circuits using Sentaurus TCAD tool / Remya Jayachandran, Rama S Komaragiri, K J Dhanaraj — NEGF method for design and simulation analysis of nano-scale MOS devices / Chhaya Verma & Jeetendra Singh — Performance investigation of a novel Si/Ge heterojunction asymmetric doublegate doping less tunnel field effect transistor for low-power analog/RF and IoT applications / Suruchi Sharma, Rikmantra Basu, Baljit Kaur — Synthesis of graphene nanocomposites toward the enhancement of energy storage performance for supercapacitors / Monojit Mondal, Avik Sett, Dipak Kumar Goswami, Tarun Kanti Bhattacharyya — Design and analysis of dopingless charge plasma based ring architecture of tunnel field effect transistor for low power application / Ashok Kumar Gupta, Ashish Raman, Prateek Kumar, Naveen Kumar, Deep Shekhar — Hybrid intelligent technique based doping profile optimization in a double gate heterdielectric TFET / Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, Koushik Guha — Graphene nanoribbon devices : advances in fabrication and applications / Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, Andres Jaramillo-Botero — Design and analysis of various neural preamplifier circuits / Swagata Devi, Koushik Guha, Krishna Lal Baishnab — Design and analysis of transition metal dichalcogenides based feedback transistor / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, Naveen Kumar — Reduced graphene-metal phthalocyanine based nanohybrids for gas sensing applications / Aman Mahajan, Manreet Kaur Sohal — Phosphorene multigate field-effect transistors for high-frequency applications / R. Ramesh, Adhithan Pon, Arkaprava Bhattacharyya — Analytical modeling of reconfigurable transistors / Ranjith R., Suja K. J., Rama S. Komaragiri — Flexi-grid technology : a necessity for spectral resource utilization / Divya Sharma, Shivam Singh, Anurag Upadhyay, Sofyan A. Taya.

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This page includes the available description and bibliographic details for “Sub-micron Semiconductor Devices Design and Applications” by Ashish Raman. Synopsis preview: Fundamental phenomena in nano scale semiconductor devices / Zeinab Ramezani and Arash Ahmadivand — Recent advancements in growth and stability of phosphorene-prospects for high performance devices / Sushil Kumar Pandey,…
Who is the author of “Sub-micron Semiconductor Devices Design and Applications”?
“Sub-micron Semiconductor Devices Design and Applications” is credited to Ashish Raman.
When was “Sub-micron Semiconductor Devices Design and Applications” published?
Publisher: CRC Press. Year: 2022.
What is the ISBN for “Sub-micron Semiconductor Devices Design and Applications”?
ISBN-13: 9780367648091.
What are the book details (language, pages, edition)?
Language: en. Pages: 392. Edition: 1.

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